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"An Accurate Device-Level Simulation Method to Estimate Cross Sections of ..."

Kentaro Kojima et al. (2019)

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DOI: 10.1109/IRPS.2019.8720481

access: closed

type: Conference or Workshop Paper

metadata version: 2019-05-31

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  - conf/irps/KojimaYFK19
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Kentaro Kojima, Kodai Yamada, Jun Furuta, Kazutoshi Kobayashi:
An Accurate Device-Level Simulation Method to Estimate Cross Sections of Single Event Upsets by Silicon Thickness in Raised Layer. IRPS 2019: 1-5

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