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"3.8 A 23.6ppm/°C Monolithically Integrated GaN Reference Voltage ..."

Chenu-Hsing Liao et al. (2020)

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DOI: 10.1109/ISSCC19947.2020.9062940

access: closed

type: Conference or Workshop Paper

metadata version: 2021-07-07

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Chenu-Hsing Liao, Shang-Hsien Yang, Meng-Yin Liao, Kai-Cheng Chung, Neha Kumari, Ke-Horng Chen, Yin-Hsi Lin, Shian-Ru Lin, Tsung-Yen Tsai, Ying-Zong Juang:
3.8 A 23.6ppm/°C Monolithically Integrated GaN Reference Voltage Design with Temperature Range from -50°C to 200°C and Supply Voltage Range from 3.9 to 24V. ISSCC 2020: 72-74

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