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"The resistive switching characteristics in tantalum oxide-based RRAM ..."

Xiaorong Chen, Jie Feng, Haili Ma (2015)

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DOI: 10.1109/NVMTS.2015.7457427

access: closed

type: Conference or Workshop Paper

metadata version: 2019-02-12

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  dblp key:
  - conf/nvmts/ChenFM15
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Xiaorong Chen, Jie Feng, Haili Ma:
The resistive switching characteristics in tantalum oxide-based RRAM device via combining high-temperature sputtering with plasma oxidation. NVMTS 2015: 1-5

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