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"On the dependence of FET noise model parameters on ambient temperature."

Marian W. Pospieszalski (2017)

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DOI: 10.1109/RWS.2017.7885975

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-24

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  dblp key:
  - conf/rws/Pospieszalski17
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  - https://dblp.org/rec/conf/rws/Pospieszalski17
Marian W. Pospieszalski:
On the dependence of FET noise model parameters on ambient temperature. RWS 2017: 159-161

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