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"Low On-Resistance H-Diamond MOSFETs With 300 °C ..."
Zeyang Ren et al. (2020)
- Zeyang Ren, Qi He, Jiamin Xu, Guansheng Yuan, Jinfeng Zhang, Jincheng Zhang, Kai Su, Yue Hao:
Low On-Resistance H-Diamond MOSFETs With 300 °C ALD-Al2O3 Gate Dielectric. IEEE Access 8: 50465-50471 (2020)
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