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"Influence of an ALD TiN capping layer on the PBTI characteristics of ..."

Hong Yang et al. (2020)

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DOI: 10.1007/S11432-019-9875-2

access: closed

type: Journal Article

metadata version: 2023-03-21

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  - journals/chinaf/YangQZTLXMWLYLZ20
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  - https://dblp.org/rec/journals/chinaf/YangQZTLXMWLYLZ20
Hong Yang, Luwei Qi, Yanbo Zhang, Bo Tang, Qianqian Liu, Hao Xu, Xueli Ma, Xiaolei Wang, Yongliang Li, Huaxiang Yin, Junfeng Li, Huilong Zhu, Chao Zhao, Wenwu Wang, Tianchun Ye:
Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO₂/TiN-capping/TiAl gate stacks. Sci. China Inf. Sci. 63(2): 129403 (2020)

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