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"STT-MRAM Operating at 0.38V Using Negative-Resistance Sense Amplifier."

Yohei Umeki et al. (2014)

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DOI: 10.1587/TRANSFUN.E97.A.2411

access: closed

type: Journal Article

metadata version: 2024-03-11

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  - journals/ieicet/UmekiYYIYKTS14
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  persistent URL:
  - https://dblp.org/rec/journals/ieicet/UmekiYYIYKTS14
Yohei Umeki, Koji Yanagida, Shusuke Yoshimoto, Shintaro Izumi, Masahiko Yoshimoto, Hiroshi Kawaguchi, Koji Tsunoda, Toshihiro Sugii:
STT-MRAM Operating at 0.38V Using Negative-Resistance Sense Amplifier. IEICE Trans. Fundam. Electron. Commun. Comput. Sci. 97-A(12): 2411-2417 (2014)

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