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"A comparison of early stage hot carrier degradation behaviour in 5 and 3 V ..."

Merlyne M. De Souza et al. (2001)

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DOI: 10.1016/S0026-2714(00)00210-9

access: closed

type: Journal Article

metadata version: 2020-02-22

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Merlyne M. De Souza, J. Wang, S. K. Manhas, E. M. Sankara Narayanan, A. S. Oates:
A comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistors. Microelectron. Reliab. 41(2): 169-177 (2001)

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