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"A novel partial-SOI LDMOSFET (>800 V) with n-type floating buried layer ..."

Chao Xia et al. (2014)

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DOI: 10.1016/J.MICROREL.2013.10.021

access: closed

type: Journal Article

metadata version: 2020-02-22

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Chao Xia, Xinhong Cheng, Zhongjian Wang, Duo Cao, Tingting Jia, Li Zheng, Yuehui Yu, Dashen Shen:
A novel partial-SOI LDMOSFET (>800 V) with n-type floating buried layer in substrate. Microelectron. Reliab. 54(3): 582-586 (2014)

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