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"Influence of ISSG tunnel oxide with decoupled plasma nitridation on erase ..."

Yue Xu, Yang Huang (2015)

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DOI: 10.1016/J.MICROREL.2015.04.009

access: closed

type: Journal Article

metadata version: 2020-02-22

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Yue Xu, Yang Huang:
Influence of ISSG tunnel oxide with decoupled plasma nitridation on erase characteristic of NOR-type floating-gate flash memories. Microelectron. Reliab. 55(7): 1126-1129 (2015)

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