"TCAD Simulation of Single Event Transient in Si Bulk MOSFET at Cryogenic ..."

Tongshan Lu, Chenghua Wang (2022)

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DOI: 10.1109/ACCESS.2022.3206401

access: open

type: Journal Article

metadata version: 2022-10-26

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Tongshan Lu, Chenghua Wang:
TCAD Simulation of Single Event Transient in Si Bulk MOSFET at Cryogenic Temperature. IEEE Access 10: 108128-108133 (2022)

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