"Novel STI Technology for Enhancing Reliability of High-k/Metal Gate DRAM."

Hyojin Park et al. (2024)

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DOI: 10.1109/ACCESS.2024.3459891

access: open

type: Journal Article

metadata version: 2024-10-22

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Hyojin Park, Gyuhyun Kil, Wonju Sung, Junghoon Han, Jungwoo Song, Byoungdeog Choi:
Novel STI Technology for Enhancing Reliability of High-k/Metal Gate DRAM. IEEE Access 12: 139427-139434 (2024)

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