"Improved High-Performance Solution Processed In₂O₃ Thin Film ..."

Fei Shan et al. (2021)

> Home

Details and statistics

DOI: 10.1109/ACCESS.2021.3056774

access: open

type: Journal Article

metadata version: 2021-04-07

- view
  - electronic edition via DOI (open access)
  authority control:
- export record
  dblp key:
  - journals/access/ShanSLPK21
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/access/ShanSLPK21
Fei Shan, Hao-Zhou Sun, Jaeyun Lee, Seungmoon Pyo, Sung-Jin Kim:
Improved High-Performance Solution Processed In₂O₃ Thin Film Transistor Fabricated by Femtosecond Laser Pre-Annealing Process. IEEE Access 9: 44453-44462 (2021)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.