"Simulation Study on Single-Event Burnout Reliability of 900V 4H-SiC Quasi ..."

Jin-Ke Shi et al. (2025)

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DOI: 10.1109/ACCESS.2024.3524391

access: open

type: Journal Article

metadata version: 2025-10-11

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Jin-Ke Shi, Ying Wang, Xin-Xing Fei, Biao Sun, Yan-Xing Song, Yu-Qian Liu, Wei Zhang:
Simulation Study on Single-Event Burnout Reliability of 900V 4H-SiC Quasi Vertical Double Diffused MOSFET. IEEE Access 13: 5023-5031 (2025)

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