"Research on the Gate Oxide Layer Aging Trend of Power Electronic Device."

Guoqing Xu et al. (2021)

> Home

Details and statistics

DOI: 10.1109/ACCESS.2021.3062465

access: open

type: Journal Article

metadata version: 2021-06-04

- view
  - electronic edition via DOI (open access)
  authority control:
- export record
  dblp key:
  - journals/access/XuSWZS21
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/access/XuSWZS21
Guoqing Xu, Lingfeng Shao, Weiwei Wei, Yanhui Zhang, Xuecheng Sun:
Research on the Gate Oxide Layer Aging Trend of Power Electronic Device. IEEE Access 9: 48474-48482 (2021)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.