"Amorphous Metal Oxide Bilayers to Avoid Sneak-Path Currents for ..."

Shruti Nirantar et al. (2021)

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DOI: 10.1002/AISY.202000222

access: open

type: Journal Article

metadata version: 2025-03-03

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Shruti Nirantar, Md. Ataur Rahman, Edwin Mayes, Madhu Bhaskaran, Sumeet Walia, Sharath Sriram:
Amorphous Metal Oxide Bilayers to Avoid Sneak-Path Currents for High-Density Resistive Memory Arrays. Adv. Intell. Syst. 3(6): 2000222 (2021)

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