"High energy proton and heavy ion induced single event transient in 65-nm ..."

Jiaqi Liu et al. (2017)

> Home

Details and statistics

DOI: 10.1007/S11432-017-9254-2

access: closed

type: Journal Article

metadata version: 2020-10-20

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/chinaf/LiuZWWZCSLLG17
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/chinaf/LiuZWWZCSLLG17
Jiaqi Liu, Yuanfu Zhao, Liang Wang, Dan Wang, Hongchao Zheng, Maoxin Chen, Lei Shu, Tongde Li, Dongqiang Li, Wei Guo:
High energy proton and heavy ion induced single event transient in 65-nm CMOS technology. Sci. China Inf. Sci. 60(12): 120405:1-120405:3 (2017)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.