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"Short-channel effects on the static noise margin of 6T SRAM composed of 2D ..."

Qian Xie et al. (2019)

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DOI: 10.1007/S11432-018-9429-2

access: closed

type: Journal Article

metadata version: 2023-02-08

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Qian Xie, Chen Chen, Mingjun Liu, Shuang Xia, Zheng Wang:
Short-channel effects on the static noise margin of 6T SRAM composed of 2D semiconductor MOSFETs. Sci. China Inf. Sci. 62(6): 62404:1-62404:8 (2019)

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