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"OTA based 200 GΩ resistance on 700 μm2 in 180 nm CMOS for ..."

Christian Mayr et al. (2014)

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DOI: —

access: open

type: Informal or Other Publication

metadata version: 2022-01-06

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  - electronic edition @ arxiv.org (open access)
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  dblp key:
  - journals/corr/MayrSNHPS14
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  persistent URL:
  - https://dblp.org/rec/journals/corr/MayrSNHPS14
Christian Mayr, Michael Schultz, Marko Noack, Stephan Henker, Johannes Partzsch, René Schüffny:
OTA based 200 GΩ resistance on 700 μm2 in 180 nm CMOS for neuromorphic applications. CoRR abs/1409.0171 (2014)

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