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"Aspect ratio of radiation-hardened MOS transistors - Modelling of the ..."

Varvara Bezhenova, Alicja Malgorzata Michalowska-Forsyth (2018)

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DOI: 10.1007/S00502-017-0575-2

access: open

type: Journal Article

metadata version: 2020-06-04

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Varvara Bezhenova, Alicja Malgorzata Michalowska-Forsyth:
Aspect ratio of radiation-hardened MOS transistors - Modelling of the equivalent channel dimensions of integrated MOS transistors in radiation-hardened enclosed layout. Elektrotech. Informationstechnik 135(1): 61-68 (2018)

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