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"Transition-metal-oxide-based resistance-change memories."

Siegfried F. Karg et al. (2008)

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DOI: 10.1147/RD.524.0481

access: closed

type: Journal Article

metadata version: 2022-10-02

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  - journals/ibmrd/KargMBRSJLJSLAWSDC08
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  - https://dblp.org/rec/journals/ibmrd/KargMBRSJLJSLAWSDC08
Siegfried F. Karg, Gerhard Ingmar Meijer, J. Georg Bednorz, Charles T. Rettner, Alejandro G. Schrott, Eric A. Joseph, Chung Hon Lam, Markus Janousch, Urs Staub, Fabio LaMattina, Santos F. Alvarado, Daniel Widmer, Richard Stutz, Ute Drechsler, Daniele Caimi:
Transition-metal-oxide-based resistance-change memories. IBM J. Res. Dev. 52(4-5): 481-492 (2008)

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