"CMOS scaling beyond the 100-nm node with silicon-dioxide-based gate ..."

Ernest Y. Wu et al. (2002)

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DOI: 10.1147/RD.462.0287

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type: Journal Article

metadata version: 2020-03-13

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Ernest Y. Wu, Edward J. Nowak, Alex Vayshenker, Wing L. Lai, David L. Harmon:
CMOS scaling beyond the 100-nm node with silicon-dioxide-based gate dielectrics. IBM J. Res. Dev. 46(2-3): 287-298 (2002)

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