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"A robust, subthreshold 12T SRAM bitcell with BL leakage compensation and ..."

Debin Kong et al. (2018)

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DOI: 10.1587/ELEX.15.20180758

access: open

type: Journal Article

metadata version: 2023-03-15

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  dblp key:
  - journals/ieiceee/KongYLYQ18
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  - https://dblp.org/rec/journals/ieiceee/KongYLYQ18
Debin Kong, Jia Yuan, Shan-Shan Li, Heng You, Shushan Qiao:
A robust, subthreshold 12T SRAM bitcell with BL leakage compensation and bit-interleaving capability. IEICE Electron. Express 15(20): 20180758 (2018)

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