"AlGaN channel MIS-HEMTs with a very high breakdown electric field and ..."

Xiangdong Li et al. (2015)

> Home

Details and statistics

DOI: 10.1587/ELEX.12.20150694

access: open

type: Journal Article

metadata version: 2025-05-05

- view
  - electronic edition via DOI (open access)
  authority control:
- export record
  dblp key:
  - journals/ieiceee/LiZFZJGZJSH15
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/ieiceee/LiZFZJGZJSH15
Xiangdong Li, Weihang Zhang, Mengdi Fu, Jincheng Zhang, Haiqing Jiang, Zhenxing Guo, Yu Zou, Renyuan Jiang, Zuo-Chen Shi, Yue Hao:
AlGaN channel MIS-HEMTs with a very high breakdown electric field and excellent high-temperature performance. IEICE Electron. Express 12(20): 20150694 (2015)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.