"Design of a 5MHz half-bridge gate driver for GaN HEMTs with adaptive ..."

Liang Li et al. (2023)

> Home

Details and statistics

DOI: 10.1587/ELEX.20.20230342

access: open

type: Journal Article

metadata version: 2024-01-01

- view
  - electronic edition via DOI (open access)
  authority control:
- export record
  dblp key:
  - journals/ieiceee/LiZHHXNC23
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/ieiceee/LiZHHXNC23
Liang Li, Dejin Zhou, Wei Huang, Ningye He, Yuan Xu, Rengxia Ning, Zhenhai Chen:
Design of a 5MHz half-bridge gate driver for GaN HEMTs with adaptive output current. IEICE Electron. Express 20(19): 20230342 (2023)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.