"Diffusion-rounded CMOS for improving both Ion and ..."

Myunghwan Ryu, Hung Viet Nguyen, Youngmin Kim (2011)

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DOI: 10.1587/ELEX.8.1783

access: open

type: Journal Article

metadata version: 2021-02-12

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Myunghwan Ryu, Hung Viet Nguyen, Youngmin Kim:
Diffusion-rounded CMOS for improving both I_on and I_off characteristics. IEICE Electron. Express 8(21): 1783-1788 (2011)

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