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"Understanding the influence of RESET current due to the active region of ..."

Yuchan Wang et al. (2017)

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DOI: 10.1587/ELEX.14.20170474

access: open

type: Journal Article

metadata version: 2021-02-12

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  dblp key:
  - journals/ieiceee/WangWCL17
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  - https://dblp.org/rec/journals/ieiceee/WangWCL17
Yuchan Wang, Yueqing Wang, Xiaogang Chen, Xiaoyun Li:
Understanding the influence of RESET current due to the active region of phase change memory. IEICE Electron. Express 14(13): 20170474 (2017)

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