"High voltage (>1100V) SOI LDMOS with an accumulated charges layer for ..."

Xiaoming Yang et al. (2013)

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DOI: 10.1587/ELEX.10.20130057

access: open

type: Journal Article

metadata version: 2021-02-12

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Xiaoming Yang, Tianqian Li, Yu Cai, Jun Wang, Changjiang Chen:
High voltage (>1100V) SOI LDMOS with an accumulated charges layer for double enhanced dielectric electric field. IEICE Electron. Express 10(4): 20130057 (2013)

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