"Simulation study of an ultra-low specific on-resistance high-voltage ..."

Bo Yi et al. (2020)

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DOI: 10.1587/ELEX.16.20190673

access: open

type: Journal Article

metadata version: 2025-11-12

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  - https://dblp.org/rec/journals/ieiceee/YiPZKCH20
Bo Yi, Yi Feng Peng, Qing Zhao, MouFu Kong, Junji Cheng, Haimeng Huang:
Simulation study of an ultra-low specific on-resistance high-voltage pLDMOS with self-biased accumulation layer. IEICE Electron. Express 17(2): 20190673 (2020)

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