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"Suppression of Edge Effects Based on Analytic Model for Leakage Current ..."

Soo-Han Choi et al. (2010)

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DOI: 10.1587/TRANSELE.E93.C.658

access: closed

type: Journal Article

metadata version: 2020-10-26

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  persistent URL:
  - https://dblp.org/rec/journals/ieicet/ChoiPPLYCK10
Soo-Han Choi, Young Hee Park, Chul-Hong Park, Sang Hoon Lee, Moon-Hyun Yoo, Jun Dong Cho, Gyu Tae Kim:
Suppression of Edge Effects Based on Analytic Model for Leakage Current Reduction of Sub-40 nm DRAM Device. IEICE Trans. Electron. 93-C(5): 658-661 (2010)

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