"Physical Origin of Stress-Induced Leakage Currents in Ultra-Thin Silicon ..."

Tetsuo Endoh, Kazuyuki Hirose, Kenji Shiraishi (2007)

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DOI: 10.1093/IETELE/E90-C.5.955

access: closed

type: Journal Article

metadata version: 2020-04-11

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Tetsuo Endoh, Kazuyuki Hirose, Kenji Shiraishi:
Physical Origin of Stress-Induced Leakage Currents in Ultra-Thin Silicon Dioxide Films. IEICE Trans. Electron. 90-C(5): 955-961 (2007)

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