"Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN ..."

Masanobu Hiroki, Narihiko Maeda, Naoteru Shigekawa (2010)

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DOI: 10.1587/TRANSELE.E93.C.579

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type: Journal Article

metadata version: 2020-04-11

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Masanobu Hiroki, Narihiko Maeda, Naoteru Shigekawa:
Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness. IEICE Trans. Electron. 93-C(5): 579-584 (2010)

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