"Influence of NH3-Plasma Pretreatment before ..."

Shinichi Hoshi et al. (2006)

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DOI: 10.1093/IETELE/E89-C.7.1052

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type: Journal Article

metadata version: 2020-04-11

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Shinichi Hoshi, Toshiharu Marui, Masanori Itoh, Yoshiaki Sano, Shouhei Seki:
Influence of NH₃-Plasma Pretreatment before Si₃N₄ Passivation Film Deposition on Current Collapse in AlGaN/GaN-HEMTs. IEICE Trans. Electron. 89-C(7): 1052-1056 (2006)

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