"Intra-Gate Length Biasing for Leakage Optimization in 45 nm Technology Node."

Yesung Kang, Youngmin Kim (2013)

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DOI: 10.1587/TRANSFUN.E96.A.947

access: closed

type: Journal Article

metadata version: 2020-04-11

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Yesung Kang, Youngmin Kim:
Intra-Gate Length Biasing for Leakage Optimization in 45 nm Technology Node. IEICE Trans. Fundam. Electron. Commun. Comput. Sci. 96-A(5): 947-952 (2013)

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