"Resistive Switching Characteristics of Silicon Nitride-Based RRAM ..."

Sungjun Kim et al. (2015)

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DOI: 10.1587/TRANSELE.E98.C.429

access: closed

type: Journal Article

metadata version: 2020-04-11

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  - https://dblp.org/rec/journals/ieicet/KimJKCP15
Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Seongjae Cho, Byung-Gook Park:
Resistive Switching Characteristics of Silicon Nitride-Based RRAM Depending on Top Electrode Metals. IEICE Trans. Electron. 98-C(5): 429-433 (2015)

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