"The Effect of PMA with TiN Gate Electrode on the Formation of ..."

Min Gee Kim, Shun'ichiro Ohmi (2019)

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DOI: 10.1587/TRANSELE.2018FUP0002

access: closed

type: Journal Article

metadata version: 2021-01-18

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Min Gee Kim, Shun'ichiro Ohmi:
The Effect of PMA with TiN Gate Electrode on the Formation of Ferroelectric Undoped HfO₂ Directly Deposited on Si(100). IEICE Trans. Electron. 102-C(6): 435-440 (2019)

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