"A 130-nm CMOS 95-mm2 1-Gb Multilevel AG-AND-Type Flash Memory ..."

Hideaki Kurata et al. (2006)

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DOI: 10.1093/IETELE/E89-C.10.1469

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type: Journal Article

metadata version: 2022-10-20

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Hideaki Kurata, Shunichi Saeki, Takashi Kobayashi, Yoshitaka Sasago, Tsuyoshi Arigane, Keiichi Yoshida, Yoshinori Takase, Takayuki Yoshitake, Osamu Tsuchiya, Yoshinori Ikeda, Shunichi Narumi, Michitaro Kanamitsu, Kazuto Izawa, Kazunori Furusawa:
A 130-nm CMOS 95-mm² 1-Gb Multilevel AG-AND-Type Flash Memory with 10-MB/s Programming Throughput. IEICE Trans. Electron. 89-C(10): 1469-1479 (2006)

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