"Heteroepitaxial Growth of GaAs/Ge Buffer Layer on Si for Metamorphic ..."

Ryo Nakao et al. (2018)

> Home

Details and statistics

DOI: 10.1587/TRANSELE.E101.C.537

access: closed

type: Journal Article

metadata version: 2020-04-11

- view
  authority control:
- export record
  dblp key:
  - journals/ieicet/NakaoAKM18
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/ieicet/NakaoAKM18
Ryo Nakao, Masakazu Arai, Takaaki Kakitsuka, Shinji Matsuo:
Heteroepitaxial Growth of GaAs/Ge Buffer Layer on Si for Metamorphic InGaAs Lasers. IEICE Trans. Electron. 101-C(7): 537-544 (2018)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.