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"PdEr-Silicide Formation and Contact Resistivity Reduction to n-Si(100) ..."

Shun'ichiro Ohmi et al. (2018)

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DOI: 10.1587/TRANSELE.E101.C.311

access: closed

type: Journal Article

metadata version: 2020-04-11

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  dblp key:
  - journals/ieicet/OhmiTZM18
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  persistent URL:
  - https://dblp.org/rec/journals/ieicet/OhmiTZM18
Shun'ichiro Ohmi, Yuya Tsukamoto, Weiguang Zuo, Yasushi Masahiro:
PdEr-Silicide Formation and Contact Resistivity Reduction to n-Si(100) Realized by Dopant Segregation Process. IEICE Trans. Electron. 101-C(5): 311-316 (2018)

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