Stop the war!

Остановите войну!

for scientists:

default search action

combined dblp search
author search
venue search
publication search

ask others

"Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers."

Masaru Sato et al. (2017)

> Home

Details and statistics

DOI: 10.1587/TRANSELE.E100.C.417

access: closed

type: Journal Article

metadata version: 2022-03-02

- view
  authority control:
- export record
  dblp key:
  - journals/ieicet/SatoNSNKIHJ17
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/ieicet/SatoNSNKIHJ17
Masaru Sato, Yoshitaka Niida, Toshihide Suzuki, Yasuhiro Nakasha, Yoichi Kawano, Taisuke Iwai, Naoki Hara, Kazukiyo Joshin:
Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers. IEICE Trans. Electron. 100-C(5): 417-423 (2017)

a service of

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.