"Junction Depth Dependence of the Gate Induced Drain Leakage in Shallow ..."

Seung-Hyun Song et al. (2008)

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DOI: 10.1093/IETELE/E91-C.5.761

access: closed

type: Journal Article

metadata version: 2020-04-11

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Seung-Hyun Song, Jae-Chul Kim, Sung-Woo Jung, Yoon-Ha Jeong:
Junction Depth Dependence of the Gate Induced Drain Leakage in Shallow Junction Source/Drain-Extension Nano-CMOS. IEICE Trans. Electron. 91-C(5): 761-766 (2008)

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