"Influence of PH3 Preflow Time on Initial Growth of GaP on Si ..."

Yasushi Takano et al. (2009)

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DOI: 10.1587/TRANSELE.E92.C.1443

access: closed

type: Journal Article

metadata version: 2020-04-11

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  - https://dblp.org/rec/journals/ieicet/TakanoOTF09
Yasushi Takano, Takuya Okamoto, Tatsuya Takagi, Shunro Fuke:
Influence of PH₃ Preflow Time on Initial Growth of GaP on Si Substrates by Metalorganic Vapor Phase Epitaxy. IEICE Trans. Electron. 92-C(12): 1443-1448 (2009)

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