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"AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave ..."

Akio Wakejima et al. (2022)

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DOI: 10.1587/TRANSELE.2022MMI0009

access: closed

type: Journal Article

metadata version: 2023-05-11

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  - https://dblp.org/rec/journals/ieicetc/WakejimaBBHOKK22
Akio Wakejima, Arijit Bose, Debaleen Biswas, Shigeomi Hishiki, Sumito Ouchi, Koichi Kitahara, Keisuke Kawamura:
AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave Applications. IEICE Trans. Electron. 105-C(10): 457-465 (2022)

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