"Robust 600 V high-voltage gate drive IC with low-temperature coefficient ..."

Jian Chen et al. (2014)

> Home

Details and statistics

DOI: 10.1049/IET-CDS.2014.0058

access: closed

type: Journal Article

metadata version: 2025-10-18

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/iet-cds/ChenZSSDH14
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/iet-cds/ChenZSSDH14
Jian Chen, Jing Zhu, Guodong Sun, Weifeng Sun, Weinan Dai, Zexiang Huang:
Robust 600 V high-voltage gate drive IC with low-temperature coefficient propagation delay time. IET Circuits Devices Syst. 8(6): 576-582 (2014)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.