"Low storage power and high noise margin ternary memory cells in ..."

Seied Ali Hosseini, Sajjad Etezadi (2020)

> Home

Details and statistics

DOI: 10.1049/IET-CDS.2019.0432

access: closed

type: Journal Article

metadata version: 2021-01-26

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/iet-cds/HosseiniE20
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/iet-cds/HosseiniE20
Seied Ali Hosseini, Sajjad Etezadi:
Low storage power and high noise margin ternary memory cells in nanoelectronics. IET Circuits Devices Syst. 14(7): 929-941 (2020)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.