"Junction temperature monitoring of silicon carbide MOSFET based on ..."

Xinbo Liu et al. (2025)

> Home

Details and statistics

DOI: 10.1002/CTA.4245

access: closed

type: Journal Article

metadata version: 2025-09-06

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/ijcta/LiuLHDD25
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/ijcta/LiuLHDD25
Xinbo Liu, Bo Liu, Shuiyuan He, Lijian Diao, Lijun Diao:
Junction temperature monitoring of silicon carbide MOSFET based on turn-off voltage spike. Int. J. Circuit Theory Appl. 53(5): 2927-2946 (2025)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.