"Dynamic electromigration modeling for transient stress evolution and ..."

Xin Huang et al. (2017)

> Home

Details and statistics

DOI: 10.1016/J.VLSI.2016.10.007

access: closed

type: Journal Article

metadata version: 2020-02-20

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/integration/HuangSKT17
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/integration/HuangSKT17
Xin Huang, Valeriy Sukharev, Taeyoung Kim, Sheldon X.-D. Tan:
Dynamic electromigration modeling for transient stress evolution and recovery under time-dependent current and temperature stressing. Integr. 58: 518-527 (2017)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.