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"A 32 nm Read Disturb-free 11T SRAM Cell with Improved Write Ability."

S. R. Mansore, R. S. Gamad, D. K. Mishra (2020)

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DOI: 10.1142/S021812662050067X

access: closed

type: Journal Article

metadata version: 2023-09-30

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  - https://dblp.org/rec/journals/jcsc/MansoreGM20
S. R. Mansore, R. S. Gamad, D. K. Mishra:
A 32 nm Read Disturb-free 11T SRAM Cell with Improved Write Ability. J. Circuits Syst. Comput. 29(5): 2050067:1-2050067:16 (2020)

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