"An experimental 256-Mb DRAM with boosted sense-ground scheme."

Mikio Asakura et al. (1994)

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DOI: 10.1109/4.328628

access: closed

type: Journal Article

metadata version: 2023-06-26

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  - https://dblp.org/rec/journals/jssc/AsakuraOTTEHOAFNY94
Mikio Asakura, Tsukasa Ooishi, Masaki Tsukude, Shigeki Tomishima, Takahisa Eimori, Hideto Hidaka, Yoshikazu Ohno, Kazutani Arimoto, Kazuyasu Fujishima, Tadashi Nishimura, Tsutomu Yoshihara:
An experimental 256-Mb DRAM with boosted sense-ground scheme. IEEE J. Solid State Circuits 29(11): 1303-1309 (1994)

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