"A 1.1-V 10-nm Class 6.4-Gb/s/Pin 16-Gb DDR5 SDRAM With a Phase Rotator-ILO ..."

Dongkyun Kim et al. (2020)

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DOI: 10.1109/JSSC.2019.2948806

access: closed

type: Journal Article

metadata version: 2020-08-30

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Dongkyun Kim, Kibong Koo, Yongmi Kim, Dong-Uk Lee, Jaejin Lee, Ki Hun Kwon, Byeongchan Choi, Hongjung Kim, Sanghyun Ku, Jong-Sam Kim, Seungwook Oh, Minsu Park, Dain Im, Yongsung Lee, Mingyu Park, Jonghyuck Choi, Junhyun Chun, Kyowon Jin, Sungchun Jang, Jun-Yong Song, Hankyu Chi, Geunho Choi, Sunmyung Choi, Changhyun Kim, Minsik Han:
A 1.1-V 10-nm Class 6.4-Gb/s/Pin 16-Gb DDR5 SDRAM With a Phase Rotator-ILO DLL, High-Speed SerDes, and DFE/FFE Equalization Scheme for Rx/Tx. IEEE J. Solid State Circuits 55(1): 167-177 (2020)

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